Method for fabricating fine pattern in semiconductor device

Details Method for fabricating fine pattern in semiconductor device Method for fabricating fine pattern in semiconductor device

2007-06-29

2009-08-04

Lebentritt, Michael S (Department: 2829)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S635000, C438S637000, C438S717000, C438S725000, C438S761000, C257SE21257, C257SE21579, C257SE23167

Reexamination Certificate

active

07569477

ABSTRACT:
A method for fabricating a fine pattern in a semiconductor device includes forming a first photoresist pattern over an etch target layer, forming a first hard mask layer over a substrate structure, planarizing the first hard mask layer to form a first hard mask pattern and expose the first photoresist pattern, removing the first photoresist pattern, forming a second photoresist pattern enclosing the first hard mask pattern, forming a second hard mask layer over the substrate structure, planarizing the second hard mask layer to form a second hard mask pattern and expose the first hard mask pattern, removing the second photoresist pattern, and etching the etch target layer using the first hard mask pattern and the second hard mask pattern.

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