Method for fabricating ferroelectric capacitor

Details Method for fabricating ferroelectric capacitor Method for fabricating ferroelectric capacitor

2007-04-03

2007-04-03

Tsai, H. Jey (Department: 2812)

Semiconductor device manufacturing: process

Having magnetic or ferroelectric component

C438S250000, C438S253000, C438S393000, C257SE21664

Reexamination Certificate

active

11071461

ABSTRACT:
A method for fabricating a ferroelectric memory having memory cells arranged in arrays, wherein an Al2O3film (2), a Pt film (3), a PZT film (4) and IrO2film (5) are formed on an interlayer insulation film. At the time of forming a top electrode, the IrO2film (5) is patterned using a resist mask having a part extending in the row direction, and then patterned using a resist mask having a part extending in the column direction. Consequently, a top electrode of the IrO2film (5) having a rectangular plan view is formed at the intersection of these resist masks.

REFERENCES:
patent: 2003/0062563 (2003-04-01), Okita
patent: 2005/0098815 (2005-05-01), Okita et al.
patent: 3-76158 (1991-04-01), None
patent: 2002-289793 (2002-10-01), None
patent: 2002-324852 (2002-11-01), None
Patent Abstracts of Japan, Publication No. 2002009256 A, published on Jan. 11, 2002.

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