Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2006-09-12
2006-09-12
Booth, Richard A. (Department: 2812)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C257S754000
Reexamination Certificate
active
07105443
ABSTRACT:
A method for fabricating epitaxial cobalt disilicide layers uses a cobalt-nitride thin film. Epitaxial cobalt disilicide (CoSi2) layers are fabricated using a cobalt-nitride thin film in a salicide process, wherein a silicide is formed on source/drain regions and a polysilicon gate electrode of a nanoscale MOS transistor. Epitaxial CoSi2layers can be fabricated on source/drain regions and a gate electrode of a silicon substrate using a cobalt-nitride thin film, without the formation of an interlayer between a cobalt layer and the silicon substrate.
REFERENCES:
patent: 4814294 (1989-03-01), West et al.
patent: 5780632 (1998-07-01), Saji et al.
patent: 6962873 (2005-11-01), Park
patent: 2003/0124845 (2003-07-01), Trivedi
Rhee, et al., “Epitaxial growth of a (100) CoSi2layer from carbonic cobalt films deposited on (100) Si substrate using an organomettallic source,”Appl. Phys. Lett. 74(7): 1003-1005, American Institute of Physics (1999).
Prabhakaran, et al., “Formation of buried epitaxial CoSi2layer through diffusion mediated reaction,”Applied Surface 117/118:280-284, Elsevier Science B.V. (1997).
Vantomme, et al., “Concentration-controlled phase selection of silicide formation during reaction deposition,”Appl. Phys. Lett. 74(21):3137-3139, American Institute of Physics (1999).
Tung, R.T., “Oxide mediated epitaxy of CoSi2on silicon,”Appl. Phys. Lett. 68(24):3461-33463 American Institute of Physics (1996).
Lawrence, et al., “Growth of epitaxial CoSi2on (100)Si,”Appl. Phys. Lett. 58(12):1308-1310, American Institute of Physics (1991).
Rhee, et al., “Cobalt Metallorganic Chemical Vapor Deposition and Formation of Epitaxial CoSi2Layer on Si(100) Substrate,”J. electrochem. Soc. 146(7):2720-2724, The Electrochemical society, Inc. (1999).
Rhee, et al., “Growth behavior and thermal stability of epitaxial CoSi2layer from cobalt-carbon films on (100) Si substrate,”J. Appl. Phys. 86(6):3452-3459, American Institute of Physics (1999).
Ahn Byung-Tae
Kim Sun-Il
Lee Seung-Ryul
Park Jong-Ho
Booth Richard A.
Korea Advanced Institute of Science and Technology
Sterne Kessler Goldstein & Fox P.L.L.C.
LandOfFree
Method for fabricating epitaxial cobalt-disilicide layers... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for fabricating epitaxial cobalt-disilicide layers..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for fabricating epitaxial cobalt-disilicide layers... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3618837