Method for fabricating dual gate semiconductor device

Details Method for fabricating dual gate semiconductor device Method for fabricating dual gate semiconductor device

1998-01-23

2000-07-11

Niebling, John F.

Semiconductor device manufacturing: process

Introduction of conductivity modifying dopant into...

Ion implantation of dopant into semiconductor region

438585, 438199, H01L 21425

Patent

active

060872462

ABSTRACT:
A method for fabricating a semiconductor device includes the steps of forming a gate insulating film on a substrate, forming semiconductor layer on the gate insulating film, selectively removing the semiconductor layer to form first and second gate electrodes, implanting ions of a first conductive type into the first gate electrode, and implanting impurity ions of a second conductive type into the second gate electrode.

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