Method for fabricating dual damascene structures

Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Making electrical device

Reexamination Certificate

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C430S313000, C430S394000

Reexamination Certificate

active

07727708

ABSTRACT:
A method for fabricating a dual damascene structure includes providing a multi-layer photoresist stack comprising a first photoresist layer and a second photoresist layer, wherein each photoresist layer has a distinct dose-to-clear value, exposing said photoresist stack to one or more predetermined patterns of light, and developing said photo-resist layers to form a multi-tiered structure in the photo-resist layers.

REFERENCES:
patent: 5288660 (1994-02-01), Hua et al.
patent: 5370973 (1994-12-01), Nishii

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