Method for fabricating doped interlayer-dielectric film of semic

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437982, H01L 2131, H01L 21316

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056521871

ABSTRACT:
The surface of a borophosphosilicate glass (BPSG) dielectric film undergoes a surface treatment, such as by plasma treatment with N.sub.2 O, N.sub.2 +NH.sub.3, N.sub.2, O.sub.2 or O.sub.3. Erosion caused by H.sub.2 SO.sub.4 boiling or by humidity absorption from the atmosphere is thereby reduced so that reflow processing at temperatures ideally below 850.degree. C. is possible and an interlayer dielectric film of excellent planarity is thus formed.

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Yasuo Ikeda, Youichirou Numasawa and Mitsuru Sakamoto; Ozone/Organic-Source APCVD . . . Films; Development Div.; NEC Res. & Dev. No. 84 (Jul. 1969).
D.S. Williams E.A. Dein; "LPCVD of BPSG from Org. Reactants;" J. Electrochemical Soc. Solid-State Science & Tech.; Mar. 1987, pp. 57-63.
Peter Lee, Maria Galiano, Peter Keswick, Jerry Wong, Bok Shin, David Wang; "Sub APCVD (SACVD) of Teos-O.sub.3 OSG & BPSG"; Th-0325-Jan. 1990 0000-0398C 1990 IEEE.

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