Method for fabricating dielectric device

Details Method for fabricating dielectric device Method for fabricating dielectric device

1996-10-01

1999-02-09

Powell, William

Etching a substrate: processes

Etching of semiconductor material to produce an article...

216 13, 216 41, 216 67, 216101, B44C 122

Patent

active

058689486

ABSTRACT:
A method for fabricating a dielectric device including a capacitor, a pyroelectric infrared detector, and the like is disclosed. The method comprises the steps of etching a dielectric substance film formed on a substrate to form a predetermined pattern with an etchant comprised of hydrofluoric acid and an oxidizing agent, and removing residues resulting from the etching by treating the etched layer with a first treating solution containing a reducing agent and subsequently with a second treating solution containing an acid.

REFERENCES:
patent: 4759823 (1988-07-01), Asseianis et al.
patent: 5258093 (1993-11-01), Maniar
patent: 5262392 (1993-11-01), Hung et al.
patent: 5413667 (1995-05-01), Fujii et al.
S. Mancha; "Chemical Etching Of Thin PLZT"; Ferroelectrics, 1992, vol. 135, pp. 131-137.

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