Coating processes – Coating by vapor – gas – or smoke
Reexamination Certificate
2007-07-10
2011-11-08
Gambetta, Kelly M (Department: 1715)
Coating processes
Coating by vapor, gas, or smoke
C427S255230, C427S255280, C427S255290, C427S255310, C427S255320, C427S255340
Reexamination Certificate
active
08053029
ABSTRACT:
Disclosed is a method for fabricating a CuInS2thin film by metal-organic chemical vapor deposition (MOCVD). The method comprises fabricating a copper thin film by depositing an asymmetric copper precursor on a substrate by MOCVD and fabricating a CuInS2thin film by depositing an indium-sulfur-containing precursor on the copper thin film by MOCVD. The method enables fabrication of a CuInS2thin film with a constant composition even under vacuum as well as an argon (Ar) atmosphere. Disclosed is further a CuInS2thin film fabricated by the method. Disclosed is further a method for fabricating an In2S3thin film for a window of a solar cell via deposition of an indium-sulfur-containing precursor on the CuInS2thin film by MOCVD. Disclosed further is an In2S3thin film fabricated by the method. The In2S3thin film is useful for a substitute for CdS conventionally used for windows of solar cells and contributes to simplification in fabrication process of solar cells.
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Lee Seung Soo
Park Jong Pil
Seo Kook Won
Shim Il Wun
Christie Parker & Hale LLP
Chung-Ang University Industry-Academy Cooperation Foundation
Gambetta Kelly M
Samsung Electronics Co,. Ltd.
Samsung SDI & Co., Ltd.
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