Method for fabricating crystalline silicon thin films

Details Method for fabricating crystalline silicon thin films Method for fabricating crystalline silicon thin films

2006-11-22

2009-02-03

Lebentritt, Michael S (Department: 2829)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S603000, C438S604000, C438S660000, C438S758000, C438S761000, C257SE21030, C257SE21171, C257SE21585, C257SE23016, C257SE23019

Reexamination Certificate

active

07485560

ABSTRACT:
An amorphous silicon (Si) film is taken to form a metal silicide of Si—Al(aluminum) under a high temperature. Al atoms is diffused into the amorphous Si film for forming the metal silicide of Si—Al as nucleus site. Then through heating and annealing, a microcrystalline or nano-crystalline silicon thin film is obtained. The whole process is only one process and is done in only one reacting chamber.

REFERENCES:
patent: 5179042 (1993-01-01), Mikoshiba et al.
patent: 5208187 (1993-05-01), Tsubouchi et al.
patent: 5302855 (1994-04-01), Matsumoto et al.
patent: 6004885 (1999-12-01), Hayakawa et al.

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