Method for fabricating crystalline-dielectric thin films and...

Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Insulative material deposited upon semiconductive substrate

Reexamination Certificate

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C438S287000, C257S410000

Reexamination Certificate

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07041607

ABSTRACT:
This invention describes a new method for forming and depositing thin films of crystalline dielectric materials. The present technique uses chemical synthesis to control the granularity and thickness of the dielectric films. This method has several key advantages over existing technologies, and facilitates the integration of crystalline dielectric materials into high-density memory devices.

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patent: 4-139005 (1992-05-01), None

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