Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2005-12-06
2005-12-06
Ghyka, Alexander (Department: 2812)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S618000, C438S624000, C438S637000, C257S003000, C257S004000, C257S758000
Reexamination Certificate
active
06972251
ABSTRACT:
A method for manufacturing integrated circuit devices including metal interconnect structures. The method includes forming a first dielectric material overlying a surface of a semiconductor substrate. The method also includes forming a metal damascene structure in the first dielectric material, which surrounds the metal damascene structure. The method selectively removes the first dielectric material surrounding a portion of the metal damascene structure to expose the portion of the metal damascene structure. The method forms a porous dielectric material surrounding a vicinity of the exposed portion of the metal damascene structure, whereupon the porous dielectric material has a dielectric constant ranging from no greater than 2.6 but greater than 1.
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Ghyka Alexander
Semiconductor Manufactoring International (Shanghai) Corporation
Townsend & Townsend and Crew LLP
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