Method for fabricating copper-aluminum metallization

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material

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438635, 438637, 438643, 438678, H01L 2144

Patent

active

059131470

ABSTRACT:
A method for fabricating copper-aluminum metallization utilizing the technique of electroless copper deposition is described. The method provides a self-encapsulated copper-aluminum metallization structure.

REFERENCES:
patent: 5039338 (1991-08-01), Kondo et al.
patent: 5674787 (1996-01-01), Zhao et al.
patent: 5789320 (1996-04-01), Andricacos et al.
patent: 5858816 (1997-12-01), Sato et al.

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