Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1997-01-21
1999-06-15
Bowers, Charles
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438635, 438637, 438643, 438678, H01L 2144
Patent
active
059131470
ABSTRACT:
A method for fabricating copper-aluminum metallization utilizing the technique of electroless copper deposition is described. The method provides a self-encapsulated copper-aluminum metallization structure.
REFERENCES:
patent: 5039338 (1991-08-01), Kondo et al.
patent: 5674787 (1996-01-01), Zhao et al.
patent: 5789320 (1996-04-01), Andricacos et al.
patent: 5858816 (1997-12-01), Sato et al.
Dubin Valery
Ting Chiu
Advanced Micro Devices , Inc.
Bowers Charles
Kwok Edward C.
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