Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-09-04
2007-09-04
Huynh, Andy (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S306000, C257S308000, C257SE21507, C257SE21590, C438S629000, C438S637000
Reexamination Certificate
active
10754439
ABSTRACT:
One (or more) contacts are produced on one or more active areas of a semiconductor wafer, it being possible for one or more isolated control lines to be arranged on the active areas with which contact is to be made. The control lines may, for example, be gate lines. The semiconductor component is fabricated in the following way: application of a polysilicon layer to the semiconductor wafer, patterning of the polysilicon layer, in order to produce a polysilicon contact above the active area, the polysilicon contact at least partly covering the two control lines, application of a first insulator layer to the semiconductor wafer, with the polysilicon contact being embedded, partial removal of the first insulator layer, so that at least the upper surface of the polysilicon contact is uncovered, and application of a metal layer to the semiconductor wafer in order to make electrical contact with the polysilicon contact.
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Krönke Matthias
Staub Ralf
Wang Kae-Horng
Huynh Andy
Infineon - Technologies AG
Nguyen Dao H.
Patterson & Sheridan L.L.P.
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