Method for fabricating contact plug with low contact resistance

Details Method for fabricating contact plug with low contact resistance Method for fabricating contact plug with low contact resistance

2005-03-22

2005-03-22

Lee, Hsien-Ming (Department: 2823)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S657000, C438S672000, C438S674000, C438S675000

Reexamination Certificate

active

06869874

ABSTRACT:
The present invention provides a method for forming a contact plug of a semiconductor device with a low contact resistance. The inventive method includes the steps of: forming a contact hole in an inter-layer insulating layer formed on a silicon substrate; removing a native oxide layer formed in the contact hole; forming a single crystal silicon layer on a surface of the silicon substrate in the contact hole, wherein the single crystal silicon layer is formed by an epitaxial growth performed at a first reaction chamber of which pressure is maintained less than approximately 10−6Torr; and filling the contact hole with polysilicon, wherein the polysilicon layer is formed at a second reaction chamber.

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