Method for fabricating contact plug in semiconductor device

Details Method for fabricating contact plug in semiconductor device Method for fabricating contact plug in semiconductor device

2006-12-27

2010-06-29

Ghyka, Alexander G (Department: 2812)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S233000, C438S586000, C438S597000, C257SE21578

Reexamination Certificate

active

07745331

ABSTRACT:
An insulation layer including a landing plug is formed over a substrate. An amorphous carbon hard mask is formed over a certain portion of the insulation layer. The insulation layer is etched using the amorphous carbon hard mask to form a storage node contact hole exposing the landing plug. A conductive material is formed in the storage node contact hole to form a storage node contact plug. Other embodiments are also described.

REFERENCES:
patent: 2003/0129825 (2003-07-01), Yoon
patent: 2005/0280035 (2005-12-01), Lee et al.
patent: 10-2005-0116314 (2005-12-01), None
patent: 10-2006-0008556 (2006-01-01), None
patent: 10-2006-0072383 (2006-06-01), None

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