Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2008-03-25
2008-03-25
Rose, Kiesha L. (Department: 2822)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C257S737000
Reexamination Certificate
active
11644184
ABSTRACT:
A microelectronic structure having a substrate of multiple conductive bumps for contact with bond pads on an electronic substrate in the fabrication of a flip chip electronic assembly. Each of the conductive bumps includes a conductive layer which is absent from at least one sidewall of the bump to prevent the inadvertent formation of a short-circuiting electrical path between adjacent conductive bumps in the electronic assembly.
REFERENCES:
patent: 6333555 (2001-12-01), Farnworth et al.
patent: 6767818 (2004-07-01), Chang et al.
patent: 2003/0183933 (2003-10-01), Kobayashi
patent: 2004/0219715 (2004-11-01), Kwon et al.
Chang Shyh-Ming
Huang Yuan-Chang
Lu Su-Chia
Akin Gump Strauss Hauer & Feld & LLP
Industrial Technology Research Institute
Rose Kiesha L.
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