Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate – Plural fluid growth steps with intervening diverse operation
Reexamination Certificate
1999-12-02
2001-06-05
Fourson, George (Department: 2823)
Semiconductor device manufacturing: process
Formation of semiconductive active region on any substrate
Plural fluid growth steps with intervening diverse operation
C438S047000, C438S962000
Reexamination Certificate
active
06242326
ABSTRACT:
FIELD OF THE INVENTION
The present invention relates to a method for fabricating a compound semiconductor substrate having an ultra-fine structure; and, more particularly, to a method for fabricating a compound semiconductor substrate having a quantum dot array structure for use in semiconductor devices such as a semiconductor laser, an optical device, a transistor and a memory device.
DESCRIPTION OF THE PRIOR ART
In a technique for fabricating a semiconductor substrate having a quantum dot array structure, a Stranski-Krastanow growth method has been recently researched and developed which uses a strain-relaxation process of a lattice mismatched materials. However, irregular-sized quantum dots are irregularly arranged on the substrate surface, so that there has been a problem in a device fabrication, particularly in a semiconductor device fabrication. Additionally, since the Stranski-Krastanow growth method can be only applied to the lattice mismatched materials, it has a limit on available materials in a device fabrication.
SUMMARY OF THE INVENTION
It is, therefore, an object of the present invention to provide a method for fabricating a compound semiconductor substrate having a quantum dot array structure for use in semiconductor devices such as a semiconductor laser, an optical device, a transistor and a memory device.
In accordance with an aspect of the present invention, there is provided a method for fabricating a compound semiconductor substrate having a quantum dot array structure, comprising the steps of: a) forming a plurality of dielectric thin layer patterns on a substrate, thereby forming an exposed area on the substrate; b) sequentially forming buffer layers and barrier layers in a pyramid shape on the exposed area of the substrate in this order; c) forming Ga droplets on the barrier layers; d) transforming the Ga droplets into GaAs quantum dots; e) performing a thermal process to the substrate; and f) growing the buffer layers and the barrier layers to form a passivation layer capping the GaAs quantum dots.
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Kim Sung-Bock
Park Kyoung-Wan
Ro Jung-Rae
Blakely & Sokoloff, Taylor & Zafman
Electronics and Telecommunications Research Institute
Estrada Michelle
Fourson George
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