Method for fabricating CMOS image sensor with pocket...

Details Method for fabricating CMOS image sensor with pocket... Method for fabricating CMOS image sensor with pocket...

2011-08-23

2011-08-23

Smith, Matthew (Department: 2823)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

C438S433000, C438S447000, C438S424000, C257S292000, C257SE27131, C257SE27132, C257SE27133, C257SE31038

Reexamination Certificate

active

08003424

ABSTRACT:
A CMOS image sensor includes a photosensitive device, a floating diffusion region, a transfer transistor, and a pocket photodiode formed in a semiconductor substrate of a first conductivity type. The floating diffusion region is of a second conductivity type. The transfer transistor has a channel region disposed between the photosensitive device and the floating diffusion region. The pocket photodiode is of the second conductivity type and is formed under a first portion of a bottom surface of the channel region such that a second portion of the bottom surface of the channel region abuts the semiconductor substrate.

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