Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-06-07
2009-02-17
Menz, Laura M (Department: 2813)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S290000, C257S291000
Reexamination Certificate
active
07491991
ABSTRACT:
A method for fabricating a CMOS image sensor is provided. The method includes: forming a gate electrode with a gate insulating layer interposed on a transistor region of a semiconductor substrate having an active region defined by a photo diode and a transistor region; forming a first impurity region of a first conductive type at a transistor region at one side of the gate electrode; forming a second impurity region of a first conductive type at a photo diode region at other side of the gate electrode; forming sidewall insulating layers at both sides of the gate electrode; forming a third impurity region of a first conductive type at one side of a gate electrode where the first impurity region is formed; and forming a fourth impurity region of a second conductive type at the gate electrode, the photodiode region and the transistor region by implanting impurity ions of a second conductive type on the entire surface of the semiconductor substrate.
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Dongbu Electronics Co. Ltd.
Menz Laura M
Saliwanchik Lloyd & Saliwanchik
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