Method for fabricating capacitor in semiconductor device

Details Method for fabricating capacitor in semiconductor device Method for fabricating capacitor in semiconductor device

2006-06-28

2010-11-02

Gurley, Lynne A (Department: 2811)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

C438S216000, C438S261000, C438S387000, C438S255000, C438S398000, C438S399000, C257SE21010, C257SE21274, C257SE21285, C257SE21337, C257SE21013, C257SE21647, C257SE27048, C257S310000, C257S337000, C257S410000, C257S532000, C257S647000

Reexamination Certificate

active

07825043

ABSTRACT:
A method for fabricating a capacitor in a semiconductor device includes: forming a bottom electrode; forming a ZrxAlyOzdielectric layer on the bottom electrode using an atomic layer deposition (ALD) method, wherein the ZrxAlyOzdielectric layer comprises a zirconium (Zr) component, an aluminum (Al) component and an oxygen (O) component mixed in predetermined mole fractions of x, y and z, respectively; and forming a top electrode on the ZrxAlyOzdielectric layer.

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State Intellectual Property Office (SIPO) of China, English Translation of Office Action Issued for Chinese Patent Application No. 200610152307.9, 8 pages (Apr. 18, 2008).

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