Method for fabricating buttable epitaxial infrared detector arra

Details Method for fabricating buttable epitaxial infrared detector arra Method for fabricating buttable epitaxial infrared detector arra

1989-12-04

1993-03-30

Nelson, Peter A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156625, B44C 122

Patent

active

051980690

ABSTRACT:
This invention provides a method for fabricating buttable infrared detector arrays by dimensionally controlled cleaving of a single crystal wafer substrate having well defined cleavage planes. The single crystal wafer substrate is first cleaved along its natural cleavage planes so as to form a plurality of cleavage lines defining rectangular detector array regions. A layer of infrared sensitive material is epitaxially grown on the cleaved single crystal wafer substrate. Infrared detector arrays are fabricated on the layer of infrared sensitive material within the rectangular detector array regions defined by the cleavage lines on the single crystal wafer substrate. The fabricated infrared detector arrays are then separated at the cleavage lines so as to form individual buttable infrared detector arrays.

REFERENCES:
patent: 4498226 (1985-02-01), Inoue et al.

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