Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-08-22
2006-08-22
Picardat, Kevin M. (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S421000, C257S426000, C438S003000, C438S308000
Reexamination Certificate
active
07095070
ABSTRACT:
In a method for fabricating a Bi thin film having a great MR (magnetoresistance) at room temperature and a method for fabricating a spintronics device using the same, the Bi thin film is fabricated by an electrodepostiting method and a sputtering method and has very great MR characteristics at room temperature, and it can be applied to various spintronics devices.
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patent: WO 00/37715 (2000-06-01), None
Gang Xiao et al., “Very Large Magnetoresistance in Electrodeposited Single-Crystal Bi Thin Films (Invited),” Journal of Applied Physics, vol. 87, No. 9, May 1, 2000, pp. 4659.
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European Search Report dated Aug. 10, 2004.
Chang Joon Yeon
Han Suk Hee
Jeun Min Hong
Kim Dal Young
Kim Hi Jung
Korea Institute of Science and Technology
Morrison & Foerster / LLP
Picardat Kevin M.
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