Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – Insulating material
Reexamination Certificate
2007-12-25
2007-12-25
Nhu, David (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
Insulating material
C257S760000, C257SE21008, C257S017000, C257S277000, C257S218000
Reexamination Certificate
active
11324479
ABSTRACT:
A method for fabricating a thermally stable ultralow dielectric constant film including Si, C, O and H atoms in a parallel plate chemical vapor deposition process utilizing a plasma enhanced chemical vapor deposition (“PECVD”) process is disclosed. Electronic devices containing insulating layers of thermally stable ultralow dielectric constant materials that are prepared by the method are further disclosed. To enable the fabrication of a thermally stable ultralow dielectric constant film, specific precursor materials are used, such as, silane derivatives, for instance, diethoxymethylsilane (DEMS) and organic molecules, for instance, bicycloheptadiene and cyclopentene oxide.
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Gates Stephen M.
Grill Alfred
Medeiros David R.
Newmayer Deborah
Nguyen Son Van
International Business Machines - Corporation
Nhu David
Scully , Scott, Murphy & Presser, P.C.
Trepp, Esq. Robert M.
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