Method for fabricating an SOI substrate

Details Method for fabricating an SOI substrate Method for fabricating an SOI substrate

1996-11-15

2000-07-18

Chang, Celia

Semiconductor device manufacturing: process

Bonding of plural semiconductor substrates

Thinning of semiconductor substrate

438690, 438704, 438734, 438977, 216 20, 216 36, 216 53, 216 57, H01L 2712, H01L 2102, H01L 21304

Patent

active

06090688&

ABSTRACT:
A method for fabricating an SOI substrate is provided, which has an active substrate formed as a thin film. The method comprises the steps of: using a both-side polishing apparatus to polish both sides of a supporting substrate 1; bonding an active substrate 2 onto the supporting substrate 1. to form a bonded-wafer; removing an unbonded portion formed at the circumference of the bonded-wafer; flat grinding the active substrate 2 to reduce the thickness thereof; etching the active substrate 2 by spin etching; and processing the active substrate to be a thin film by PACE processing.

REFERENCES:
patent: 4954189 (1990-09-01), Hahn et al.
patent: 5051134 (1991-09-01), Schnegg et al.
patent: 5238875 (1993-08-01), Ogino
patent: 5340435 (1994-08-01), Ito et al.
patent: 5478408 (1995-12-01), Mitani et al.
patent: 5863829 (1999-01-01), Nakayoshi et al.
Nakayoshi et al. "Manufacture of laminated SOI substrate for semiconductor device" CA 126:68767, 1996.

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