Active solid-state devices (e.g. – transistors – solid-state diode – Organic semiconductor material
Reexamination Certificate
2011-01-11
2011-01-11
Phung, Anh (Department: 2824)
Active solid-state devices (e.g., transistors, solid-state diode
Organic semiconductor material
C257SE51025, C257SE51028, C257SE51029, C257SE51031, C257SE51032, C438S099000
Reexamination Certificate
active
07868322
ABSTRACT:
Disclosed is a method for fabricating an organic thin film transistor by oxidation and selective reduction of an organic semiconductor material. According to the method, stability of interfaces between a semiconductor layer and source/drain electrodes of an organic thin film transistor may be guaranteed. Therefore, an organic thin film transistor fabricated by the method may exhibit improved performance characteristics, e.g., minimized or decreased contact resistance and increased charge carrier mobility.
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Hahn Jung Seok
Kim Do Hwan
Koo Bon Won
Lee Sang Yoon
Harness & Dickey & Pierce P.L.C.
Lulis Michael
Phung Anh
Samsung Electronics Co,. Ltd.
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