Semiconductor device manufacturing: process – Forming bipolar transistor by formation or alteration of...
Patent
1997-11-13
2000-12-05
Whitehead, Jr., Carl
Semiconductor device manufacturing: process
Forming bipolar transistor by formation or alteration of...
438317, 438341, 438348, 438350, H01L 21331
Patent
active
061566160
ABSTRACT:
The present invention relates to a bipolar transistor of NPN type implemented in an epitaxial layer within a window defined in a thick oxide layer, including an opening formed substantially at the center of the window, this opening penetrating into the epitaxial layer down to a depth of at least the order of magnitude of the thick oxide layer, an N-type doped region at the bottom of the opening, a first P-type doped region at the bottom of the opening, a second lightly-doped P-type region on the sides of the opening, and a third highly-doped P-type region in the vicinity of the upper part of the opening, the three P-type regions being contiguous and forming the base of the transistor.
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French Search Report from French Patent Application 96 14411, filed Nov. 19, 1996.
French Search Report from French Patent Application 96 14412, filed Nov. 19, 1996.
Galanthay Theodore E.
Guerrero Maria
Jr. Carl Whitehead
Morris James H.
SGS-Thomson Microelectronics S.A.
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