Method for fabricating an LCD device

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer

Reexamination Certificate

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C438S496000, C438S780000

Reexamination Certificate

active

07989271

ABSTRACT:
A method for fabricating an LCD device is disclosed, in which a reliable thin film pattern is formed as process deviation is minimized. The method includes forming a thin film on a substrate; forming an etch resist solution on the thin film; applying a soft mold having a concave portion and a convex portion to the etch resist solution, wherein the convex portion includes a first width and a second width different than the first width; forming an etch resist pattern having a predetermined linewidth controlled by the pressure applied by the soft mold; hardening the etch resist pattern; separating the soft mold from the substrate; and patterning the thin film using the etch resist pattern as a mask.

REFERENCES:
patent: 6334960 (2002-01-01), Willson et al.
patent: 7754780 (2010-07-01), Kim
patent: 2003/0138589 (2003-07-01), Takemori et al.
patent: 2005/0140909 (2005-06-01), Kim et al.
patent: 2005/0230346 (2005-10-01), Kasumi et al.
patent: 2005/0282402 (2005-12-01), Kim
patent: 2006/0249886 (2006-11-01), Chao et al.
patent: 1638545 (2005-07-01), None

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