Method for fabricating an interconnect structure with hard mask

Details Method for fabricating an interconnect structure with hard mask Method for fabricating an interconnect structure with hard mask

1998-08-18

2000-02-22

Quach, T. N.

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438624, 438629, 438637, H01L 2128

Patent

active

060279958

ABSTRACT:
An interconnect system is provided. The interconnect system includes a silicon substrate and a first dielectric layer formed upon the silicon substrate. The interconnect system also includes a first level of at least two electrically conductive lines formed upon the first dielectric layer. The interconnect system further includes a region of low dielectric constant material formed between the at least two electrically conductive lines. The interconnect system also includes a first hard mask formed upon the polymer region.

REFERENCES:
patent: 4767724 (1988-08-01), Kim et al.
patent: 5110712 (1992-05-01), Kessler et al.
patent: 5155576 (1992-10-01), Mizushima
patent: 5244837 (1993-09-01), Dennison
patent: 5399508 (1995-03-01), Nowak
patent: 5438006 (1995-08-01), Chang et al.
patent: 5466639 (1995-11-01), Ireland
patent: 5468342 (1995-11-01), Nulty et al.
patent: 5488011 (1996-01-01), Figura et al.
patent: 5510652 (1996-04-01), Burke et al.
patent: 5548159 (1996-08-01), Jeng
patent: 5552638 (1996-09-01), O'Connor et al.
patent: 5604380 (1997-02-01), Nishimura et al.
patent: 5661344 (1997-08-01), Havemann et al.

Affiliated with

Also associated with

Rating

Method for fabricating an interconnect structure with hard mask does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for fabricating an interconnect structure with hard mask , we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for fabricating an interconnect structure with hard mask will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-520169