Method for fabricating an integrated circuit device with...

Details Method for fabricating an integrated circuit device with... Method for fabricating an integrated circuit device with...

2006-10-03

2006-10-03

Toledo, Fernando L. (Department: 2823)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S763000, C257SE21279, C257SE21576, C257SE23167

Reexamination Certificate

active

07115501

ABSTRACT:
A method for fabricating an integrated circuit device, an electrically conductive substrate being provided, an insulation layer being deposited on the substrate, the insulation layer being etched in structures, a contact-making layer being deposited on the patterned insulation layer and on the substrate in depressions which have first and second lateral dimensions, the contact-making layer being etched back in such a way that the contact-making layer is preserved in the structures with the depressions which have first lateral dimensions of the order of magnitude of the structure depth of the insulation layer and the contact-making layer is removed in the structures with depressions which have second lateral dimensions significantly greater than the structure depth of the insulation layer.

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patent: 2002/0182886 (2002-12-01), Spinner et al.
patent: 2003/0102475 (2003-06-01), Kwon et al.
patent: 42 32 621 (1994-03-01), None

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