Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor
Reexamination Certificate
2007-08-28
2007-08-28
Kunemund, Robert (Department: 1722)
Single-crystal, oriented-crystal, and epitaxy growth processes;
Forming from vapor or gaseous state
With decomposition of a precursor
C117S094000, C117S095000, C117S096000, C117S915000
Reexamination Certificate
active
10859612
ABSTRACT:
A method for fabricating an epitaxial substrate. The technique includes providing a crystalline or mono-crystalline base substrate, implanting atomic species into a front face of the base substrate to a controlled mean implantation depth to form a zone of weakness within the base substrate that defines a sub-layer, and growing a stiffening layer on a front face of the base substrate by using a thermal treatment in a first temperature range. The stiffening layer has a thickness sufficient to form an epitaxial substrate. In addition, the method includes detaching the stiffening layer and the sub-layer from the base substrate by using a thermal treatment in a second temperature range higher than the first temperature range. An epitaxial substrate and a remainder of the base substrate are obtained. The epitaxial substrate is suitable for use in growing high quality homoepitaxial or heteroepitaxial films thereon.
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Kunemund Robert
S.O.I.Tec Silicon on Insulator Technologies
Winston & Strawn LLP
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