Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having schottky gate
Patent
1996-01-17
1997-05-20
Trinh, Michael
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having schottky gate
438179, 438184, H01L 218252
Patent
active
056311753
ABSTRACT:
A field effect transistor (10) has an active layer (16) formed in a substrate (12). A gate (20) is disposed on an elevated platform (18) formed from the active layer (16). The elevated platform (18) raises the bottom surface (21) of the gate (20) relative to the top surface (34, 36) of the active region (13) on either side of the gate (20). A fabrication method for the transistor (10) forms the elevated platform (18) by etching the active region surface (44) on both sides of the gate (20) so that the bottom surface (21) of the gate (20) is elevated relative to the top surface (34) of the surrounding active region (13). The gate (20) itself and/or a patterned photoresist layer (116) may be used as a mask for performing this etch.
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Gilbert James G.
Golio John M.
Halchin David J.
Klingbeil, Jr. Lawrence S.
Motorola Inc.
Neel Bruce T.
Trinh Michael
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