Method for fabricating an Al-Ge alloy wiring of semiconductor de

Details Method for fabricating an Al-Ge alloy wiring of semiconductor de Method for fabricating an Al-Ge alloy wiring of semiconductor de

1995-12-08

1998-12-08

Bowers, Jr., Charles L.

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438627, 438629, 438653, 438643, 438660, 438688, H01L 214763

Patent

active

058468773

ABSTRACT:
A method for fabricating wiring of a semiconductor device, which includes a first step for depositing an insulating film on a semiconductor substrate, and forming contact holes by selectively etching the insulating film, a second step for forming a barrier layer on the insulating film and the substrate, a third step for forming a first aluminum alloy layer on the barrier layer, a fourth step for forming a second aluminum alloy layer containing germanium on the first aluminum alloy layer, and a fifth step for forming an aluminum alloy wiring by annealing the substrate on which the first and the second aluminum alloy layers are formed, whereby making it possible to obtain the wiring of a semiconductor device capable of flowing at a low temperature which is the characteristic of Al--Ge wiring and capable of improving the characteristic of the electromigration of the wiring.

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