Method for fabricating Al metal line

Details Method for fabricating Al metal line Method for fabricating Al metal line

2006-08-14

2009-02-10

Picardat, Kevin M (Department: 2822)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S643000, C438S688000

Reexamination Certificate

active

07488681

ABSTRACT:
Disclosed is a method for fabricating an Al metal line. The method includes forming an insulating layer on a semiconductor substrate; forming a Ti layer, a bottom TiN layer, an Al layer and a top TiN layer in successive order on the insulating layer; plasma-treating the top TiN layer; forming a photoresist pattern on the plasma-treated top TiN layer; and etching the plasma-treated top TiN layer, the Al layer, the bottom TiN layer, and the Ti layer using the photoresist pattern as an etching mask, thereby forming the Al metal line.

REFERENCES:
patent: 2003/0003719 (2003-01-01), Lim et al.

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