Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-02-28
2006-02-28
Thomas, Tom (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S327000, C257S329000, C257S331000, C257S332000
Reexamination Certificate
active
07005701
ABSTRACT:
A method for fabricating a vertical nitride read-only memory (NROM) cell. A substrate having at least one trench is provided. A spacer is formed over the sidewall of the trench. Subsequently, ion implantation is performed on the substrate using the spacer as a mask to form doping areas as bit lines in the substrate near its surface and the bottom of the trench. Bit line oxides are formed over each of the doping areas. After the spacer is removed, a conformable insulating layer as gate dielectric is deposited on the sidewall of the trench and the surface of the bit line oxide. Finally, a conductive layer as a word line is deposited over the insulating layer and fills in the trench.
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Chuang Ying-Cheng
Hsiao Ching-Nan
Huang Chung-Lin
Lin Chi-Hui
Fenty Jesse A.
Nanya Technology Corporation
Quintero Law Office
Thomas Tom
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