Method for fabricating a tungsten plug structure and an overlyin

Details Method for fabricating a tungsten plug structure and an overlyin Method for fabricating a tungsten plug structure and an overlyin

1998-10-05

2000-08-15

Everhart, Caridad

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438672, 438673, 438636, H01L 2144

Patent

active

061036234

ABSTRACT:
A process for forming a tungsten plug structure, in a contact hole, without recessing of the tungsten plug, or of the adhesive and barrier layers, located on the sides of the contact hole, during the tungsten plug patterning procedure, has been developed. The process features a two stage, in situ RIE procedure, in which a photoresist shape, larger in width than the diameter of the contact hole, is used as a mask to allow patterning of an aluminum based layer, of an underlying tungsten, and of the barrier and adhesive layers. The result of the two stage, in situ RIE procedure is an aluminum based interconnect structure, overlying a tungsten plug structure, with the tungsten plug structure comprised of a tungsten plug, in a contact hole, protected during the patterning procedure by the overlying aluminum based interconnect structure.

REFERENCES:
patent: 5326431 (1994-07-01), Kadomura
patent: 5387556 (1995-02-01), Xiaobing et al.
patent: 5407861 (1995-04-01), Marangon et al.
patent: 5523627 (1996-06-01), Abe et al.
patent: 5700739 (1997-12-01), Chiang et al.
patent: 5702983 (1997-12-01), Shinohara
patent: 5767015 (1998-06-01), Tabara

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