Method for fabricating a trench isolation structure having a...

Details Method for fabricating a trench isolation structure having a... Method for fabricating a trench isolation structure having a...

2008-07-01

2008-07-01

Smith, Zandra (Department: 2822)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Recessed oxide by localized oxidation

C438S424000, C438S440000, C438S435000, C257SE21002

Reexamination Certificate

active

07393756

ABSTRACT:
A method for fabricating a trench isolation structure wherein a trench is formed in a silicon body and an oxide layer is formed in the trench. The silicon body is exposed at the bottom of the trench by means of an etching step, and silicon oxide is selectively grown on the silicon exposed at the bottom of the trench, the silicon oxide being grown from the bottom of the trench toward an upper edge of the trench.

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