Method for fabricating a through hole on a semiconductor...

Details Method for fabricating a through hole on a semiconductor... Method for fabricating a through hole on a semiconductor...

2006-02-07

2006-02-07

Zarabian, Amir (Department: 2822)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S734000

Reexamination Certificate

active

06995086

ABSTRACT:
A method for fabricating a through hole is disclosed. First, a conductive structure having a conductive layer and a cap layer are formed on a substrate. A patterned first photoresist layer is formed on the substrate and the conductive structure to define a pattern of the through hole. Then, a first etching process to remove the cap layer not covered by the first photoresist layer is performed until the conductive layer is exposed. The first photoresist layer is removed. A dielectric layer and a patterned second photoresist layer are formed on the substrate. Finally, a second etching process is performed to remove the dielectric layer not covered by the second photoresist layer until the conductive layer is exposed. The pattern of the second photoresist layer is the same as the pattern of the first photoresist layer.

REFERENCES:
patent: 5702568 (1997-12-01), Shin et al.
patent: 5883007 (1999-03-01), Abraham et al.
patent: 6046101 (2000-04-01), Dass et al.
patent: 6153504 (2000-11-01), Shields et al.
patent: 6156663 (2000-12-01), Watanabe et al.
patent: 6534396 (2003-03-01), Fahn et al.

Affiliated with

Also associated with

Rating

Method for fabricating a through hole on a semiconductor... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for fabricating a through hole on a semiconductor..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for fabricating a through hole on a semiconductor... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3681431