Method for fabricating a thin film transistor matrix device

Details Method for fabricating a thin film transistor matrix device Method for fabricating a thin film transistor matrix device

2006-03-16

2009-08-18

Lee, Hsien-ming (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C438S151000, C257SE29151, C349S192000

Reexamination Certificate

active

07575960

ABSTRACT:
A method for fabricating a thin film transistor matrix device which includes forming a transparent insulating substrate, arranging a plurality of thin film transistors on the substrate in a matrix, arranging a plurality of picture element electrodes on the substrate in a matrix and connecting the picture element electrodes to sources of the thin film transistors. The method also includes forming a plurality of bus lines for commonly connecting gates or drains of the thin film transistors, forming a plurality of bus line terminals on the ends of the bus lines, respectively, with each bus line terminal being provided for each bus line, and forming one connection line on the substrate in a region outer of plurality of the bus line terminals and commonly connecting the plurality of bus lines. The method further includes the step of electrically disconnecting the bus lines from the connection line by laser melting.

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