Method for fabricating a thin film transistor for use with a...

Details Method for fabricating a thin film transistor for use with a... Method for fabricating a thin film transistor for use with a...

2006-09-25

2009-06-30

Rose, Kiesha L (Department: 4116)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C438S149000, C438S151000

Reexamination Certificate

active

07553711

ABSTRACT:
In a fabrication method of a thin film transistor, a gate electrode is patterned with a first mask and an active pattern and a photoresist pattern are formed with a second mask. The photoresist pattern is ashed based on a predetermined width of an etch stopper. An insulating layer underlying the ashed photoresist pattern is patterned to form the etch stopper. In the fabrication method, the etch stopper may function as a passivation layer and is formed on an active layer of a thin film transistor part.

REFERENCES:
patent: 6664149 (2003-12-01), Shih
patent: 2005/0221546 (2005-10-01), Lee et al.
patent: 2007/0042537 (2007-02-01), Lee

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