Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2000-06-01
2001-12-11
Elms, Richard (Department: 2824)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S149000, C438S154000
Reexamination Certificate
active
06329226
ABSTRACT:
FIELD OF THE INVENTION
The present invention relates to the field of thin-film transistors, in particular the field of fabricating an organic thin-film field effect transistor.
BACKGROUND INFORMATION
Techniques for fabricating and patterning transistors include photochemical patterning, for example, to construct source/drain electrodes and appropriate interconnections for functional organic circuits. Such methods, however, may have the processing disadvantage of relying on vacuum evaporated conductors for source, drain and thin dielectric layers. Although it is possible to produce low voltage (~5 V) transistors with thin gate dielectrics of SiO
2
(~100 nm) by combining printing and low cost near-field photolithographic methods, solution processed dielectrics typically include thick (~1 &mgr;m) spin cast or screen printed polymer films. Accordingly, the low capacitance of these layers restricts operation to voltages (~100 V) that may exceed voltages required for many applications.
High capacitance gate dielectrics of barium zirconate titanate formed by radio frequency magnetron sputtering have been successfully used for organic p-channel transistors, however, opportunities remain for convenient procedures for fabricating thin, low defect (pinhole-free) gate dielectrics of more conventional and easily processible materials. A need exists for fabricating transistors that incorporate an organic semiconductor and that can operate at low voltages, including anodization for thin (~50 nm), high capacitance gate dielectrics, and microcontact printing on electroless silver for high resolution (~1 &mgr;m) source/drain electrodes.
SUMMARY OF THE INVENTION
An aspect of the present invention provides a method for fabricating a thin-film transistor. The method includes preparing a gate electrode on a substrate, anodizing at least a portion of the gate electrode to form a gate dielectric, and fabricating an electrically conducting source electrode and a drain electrode on the gate dielectric. The method also includes depositing an organic semiconductor on at least a portion of the gate dielectric, the source electrode and the drain electrode.
Another aspect of the present invention provides a method for fabricating a thin-film transistor. The method includes preparing a gate electrode on a substrate, anodizing at least a portion of the gate electrode to form a gate dielectric and depositing an organic semiconductor on at least a portion of the gate dielectric. The method also includes fabricating an electrically conducting source electrode and a drain electrode on the organic semiconductor.
REFERENCES:
patent: 5981970 (1999-11-01), Dimitrakopoulos et al.
patent: 6150191 (2000-11-01), Bao
patent: 6157127 (2000-12-01), Hosokawa et al.
Van Zant, Peter “Microchip Fabrication—A Practical Guide to Semiconductor Processing” Mcgraw-Hill, Fourth edition, p 188.
Jones Christopher D. W.
Murphy Donald W.
Rogers John A.
Slusher Richart E.
Tate Jennifer
Agere Systems Guardian Corp.
Baker & McKenzie
Elms Richard
Smith Bradley
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