Fishing – trapping – and vermin destroying
Patent
1993-08-05
1995-11-28
Hearn, Brian E.
Fishing, trapping, and vermin destroying
437101, 437913, 437937, H01L 2186
Patent
active
054707684
ABSTRACT:
To form a contact layer on source and drain electrodes of a stagger-type TFT, a conductive material is selectively sticked to the surface of the source and drain electrodes and a contact layer is selectively deposited by using the conductive material as growth species to form an active semiconductor layer on the contact layer. For an inverted-stagger-type TFT, a conductive material is selectively deposited on the surface of a contact layer to use the selectively deposited conductive material as source and drain electrodes so that patterning is unnecessary. To selectively deposit a contact layer of a TFT by alternately repeating etching and deposition, the temperature for the etching is set to 200.degree. C. or lower. A contaminated layer on the surface of a semiconductor film serving as an active semiconductor layer and contact layer of a TFT is removed by plasma at the temperature of 200.degree. C. or lower. For a stagger-type thin-film transistor, the hydrogen or halogen content of an insulating film serving as the substrate of source and drain electrodes is increased. For an inverted-stagger thin-film transistor, the hydrogen or halogen content of an insulating film serving as a channel protective film is increased. Thus, the etching rate of the surfaces of these insulating films by plasma increases.
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Hirano Takuya
Ohgata Koji
Oki Ken-ichi
Takizawa Yutaka
Tanaka Tsutomu
Fujitsu Limited
Hearn Brian E.
Trinh Michael
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