Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Patent
1995-05-02
1997-06-10
Bowers, Jr., Charles L.
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
148DIG17, 438486, 438906, H01L 2184
Patent
active
056375123
ABSTRACT:
There is Disclosed a semiconductor device comprising a silicon film formed on a substrate having at least a surface formed of an insulative material, the silicon film being heat-treated at a temperature below 600.degree. C. and being partially coated with a silicon oxide film formed by electronic cyclotron resonance plasma CVD.
REFERENCES:
patent: 4624737 (1986-11-01), Shimbo
patent: 4804640 (1989-02-01), Kaganowicz et al.
patent: 4859908 (1989-08-01), Yoshida et al.
patent: 4883766 (1989-11-01), Ishida et al.
patent: 4997746 (1991-03-01), Greco et al.
patent: 5130264 (1992-07-01), Troxell et al.
patent: 5141885 (1992-08-01), Yoshida et al.
patent: 5147826 (1992-09-01), Liu et al.
patent: 5182495 (1993-01-01), Fukuda et al.
patent: 5229334 (1993-07-01), Kato
patent: 5231297 (1993-07-01), Nakayama et al.
patent: 5470799 (1995-11-01), Itoh et al.
H. Ohshima, et al, IEDM 1989 Tech. DIG., p. 157 "Future Trends For IFT IC on Glass Substrates".
M. K. Hatalis et al., J. Appl. Phys., 63, 7 (1988) 2260 "Low Temp. Anneal. pf A-Si Films".
A. Mimura et al., IEE Trands. Electron. Dev., 36, 2(1989) 351 "Low Temperature Poly-Si N-Channel TFT's For LCD".
T. Noguchi et la., Jpn. J. Appl. Phys., 25,2 (1986) L121 "Low Temperature Polysilicon Super Thin Film Transistor".
Hiroyuki Ohshima et al., "Future Trends for TFT Integrated Circuits on Glass Substrates," IEDM 89, IEEE, pp. 157-160.
Hidoe Izawa et at al., "Low Temperature of Deposition High Quality Silicon Oxide Films," Japanese Journal of Applied Physics Extended Abstracts 22th Conf. Solid State Devices and Materials (1990), Tokyo, Japan, pp. 183-186.
Kunino Masumo, "Low Temperature Polysilicon TFTs by Non-Mass-Seperated Ion Flux Doping Technique," Japanese Journal of Applied Physical Extended Abstracts 22th Conf. Solid State Devices and Materials (1990), Tokyo, Japan, pp. 975-978.
Ryuuma Hirano et al., "Fabrication of Polycrystalline Silicon Thin-FIlm Transistors by Ion Shower Doping Technique," Electronics and Communications in Japan, Part 2, vol. 71, No. 10, 1988, pp. 40-45.
Thomas W. Little et al., "A 9.5 Inch, 1.3 Mega-Pixel Low Temperature Poly-Si TFT-LCD Fabricated by SPC of Very Thin Films and an ECR-CVD Gate Insulator," Conference Record of the 1991 International Display Research Conference, presented Oct. 15-17, 1991, pp. 219-222.
Thomas W. Little et al., "Low Temperature Poly-Si TFTs Using Solid Phase Crystallization (SPC) of Very Thin Films and an ECR-CVD Gate Insulator," Extended Abstracts of the 1991 International Conference on Solid State Devices and Materials, Yokohama, Japan 1991, pp. 644-646.
Satoshi Inoue et al., "Low Temperature CMOS Self-Aligned Poly-Si TFTs and Circuit and Circuit Scheme Utilizing New Ion Doping and Masking Technique," IEDM Technical Digest, International Electron Devices Meeting, Dec. 8-11, 1991, Washington, D.C., pp. 555-558.
Hatalis, Miltiadis K., et al., "High-Performance Thin-Film Transistors in Low-Temperature Crystallized LPCVD Amorphous Silicon Films," IEEE, Electron Device Letters. 8(8), Aug. 1987, pp. 361-364.
Little, Thomas W., et al., "Low Temperature Poly-Si TFTs Using Solid Phase Crystallization (SPC) of Very Thin Films and an ECR-CVD Gate Insulator," the Japan Society of Applied Physics, 1991 International COnference on Solid State.
Little Thomas W.
Miyasaka Mitsutoshi
Bowers Jr. Charles L.
Radomsky Leon
Seiko Epson Corporation
LandOfFree
Method for fabricating a thin film semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for fabricating a thin film semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for fabricating a thin film semiconductor device will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-764194