Method for fabricating a thin film and a metal line of a...

Details Method for fabricating a thin film and a metal line of a... Method for fabricating a thin film and a metal line of a...

2006-12-19

2008-10-07

Kebede, Brook (Department: 2823)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S685000, C257SE21040

Reexamination Certificate

active

07432193

ABSTRACT:
A method for forming a thin film of a semiconductor device is provided. The method includes forming a TaN film on a semiconductor substrate by employing an atomic layer deposition method; and converting a part of the TaN film into a Ta by reacting the TaN film with NO2to form a Ta film. The NO2is formed by reacting NH3with O2.

REFERENCES:
patent: 7229918 (2007-06-01), Moon
patent: 2003/0133849 (2003-07-01), Schumacher et al.

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