Method for fabricating a thermally stable diamond-like carbon fi

Details Method for fabricating a thermally stable diamond-like carbon fi Method for fabricating a thermally stable diamond-like carbon fi

1998-04-10

1999-11-09

King, Roy V.

Coating processes

Direct application of electrical, magnetic, wave, or...

Plasma

4272497, 4273722, 427904, 427902, B05D 306, C23C 1626

Patent

active

059810009

ABSTRACT:
A method for fabricating a thermally stable carbon-based low dielectric constant film such as a hydrogenated amorphous carbon film or a diamond-like carbon film in a parallel plate chemical vapor deposition process utilizing plasma enhanced chemical vapor deposition process is disclosed. Electronic devices containing insulating layers of thermally stable carbon-based low dielectric constant materials that are prepared by the method are further disclosed. In order to render the carbon-based low dielectric constant film thermally stable, i.e., at a temperature of at least 400.degree. C., the films are heat treated at a temperature of not less than 350.degree. C. for at least 0.5 hour. To enable the fabrication of thermally stable carbon-based low dielectric constant film, specific precursor materials such as cyclic hydrocarbons should be used, for instance, cyclohexane or benzene. The geometry of the chemical vapor deposition chamber is important in making the present invention thermally stable low dielectric constant films in order to achieve a specific bias voltage on the substrate onto which the electronic structure is formed.

REFERENCES:
patent: 5569501 (1996-10-01), Bailey et al.
patent: 5674355 (1997-10-01), Cohen et al.
Hirakuri et al, Thin Solid Films 302(1997 No month data!) p. 5-11.

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