Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1999-06-10
2000-10-31
Niebling, John F.
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438585, 438588, 438591, 438592, 438595, H01L 2144
Patent
active
061402184
ABSTRACT:
The present invention provides a method of fabricating a T-shaped hard mask/conductive pattern profile and a process of etching a self-aligned contact opening using a T-shaped hard mask/conductive pattern profile to improve the self-aligned contact isolation. The process begins by forming a polysilicon or more preferably a polysilicon/silicide conductive layer over a semiconductor substrate. A silicon oxynitride hard mask layer is formed over the conductive layer. The silicon oxynitride hard mask layer is patterned to form a hard mask pattern. The conductive layer is patterned to form a conductive pattern in a three step etch using Cl.sub.2 and HBr chemistry. The silicon oxynitride hard mask releases oxygen during the conductive layer etch resulting in a T-shaped hard mask/conductive pattern profile (e.g. the width of the hard mask is greater than the width of the conductive pattern after etching). In a preferred embodiment, the a T-shaped hard mask/conductive pattern profile is used to form a self-aligned contact for a capacitor over bitline structure.
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Chao Li-Chih
Hsiao Yung-Kuan
Lin Huan-Just
Liu Jen-Cheng
Ackerman Stephen B.
Gurley Lynne
Niebling John F.
Saile George O.
Stoffel William J.
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