Method for fabricating a structure on a cobalt silicide oxide me

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material

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438658, 438655, 438642, 438652, H01L 2144, H01L 214763

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active

060048794

ABSTRACT:
A novel compound PVD target material, suitable for use in the fabrication of cobalt silicide layers on semiconductor devices is disclosed. The compound material is formed by blending an amount of SiO.sub.z with an amount of CoSi.sub.x to form a blended compound material CoSi.sub.x O.sub.y and then compressing and shaping said blended compound material in a hot powder press into an appropriate shape for use in a PVD sputtering chamber. A polysilicon MOSFET gate stack structure and a source/drain salicide structure incorporating the CoSi.sub.x O.sub.y compound material are described. The addition of a small amount of oxide to the cobalt silicide, when sputter deposited, results in an as-deposited film of CoSi.sub.x O.sub.y having smaller grain size and significantly enhanced thermal stability over conventional CoSi.sub.x, and other characteristics desirable in the fabrication of salicide MOSFET structures.

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Nygren, Stefan; Johansson, Stefan; High Temperature Effects on a CoSi2/Poly-Si Metal Oxide Semiconductor Gate Configuration, J. Vac. Sci. Tech. A8(3), May/Jun. 1990, pp. 3011-3013, May 1, 1990.

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