Method for fabricating a structure of interconnections...

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material

Reexamination Certificate

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C438S586000

Reexamination Certificate

active

06875686

ABSTRACT:
The invention concerns a method for fabricating a damascene type structure of interconnections on a semiconductor device. It includes the following steps:formation of a first level of conductors in a first electric insulating layer and of a second level of conductors in a second electric insulating layer, with the conductors in the first level being arranged with a pre-determined spacing in order to allow, in a later step, the formation of air or vacuum gaps between the conductors in the first level,elimination of the second electric insulating layer,elimination, at least partial, of the first electric insulating layer in order to eliminate at least some parts of the first layer corresponding to the gaps to be formed,deposit, over the structure thus obtained, of a material with low permittivity, with this deposit not filling the space between the conductors in the first level whose spacing has been planned to allow the formation of gaps.

REFERENCES:
patent: 5559055 (1996-09-01), Chang et al.
patent: 5953626 (1999-09-01), Hause et al.
patent: 6071805 (2000-06-01), Liu
patent: 6165890 (2000-12-01), Kohl et al.
patent: 2 770 028 (1999-04-01), None
patent: 2 330001 (1999-04-01), None
patent: 10233449 (1998-02-01), None

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