Method for fabricating a storage plate of a semiconductor capaci

Details Method for fabricating a storage plate of a semiconductor capaci Method for fabricating a storage plate of a semiconductor capaci

1998-01-20

1999-09-28

Nguyen, Tuan H.

Semiconductor device manufacturing: process

Making passive device

Stacked capacitor

438255, H01L 2120

Patent

active

059602953

ABSTRACT:
The present invention provides a method for fabricating a storage plate of a semiconductor capacitor. A conductive layer is first formed on a semiconductor substrate. A glue layer is formed on the conductive layer. A plurality of micro masking-balls are then spread onto the surface of the glue layer. Using these micro masking-balls as masks, the glue layer is etched to expose a portion surface of the conductive layer. Using the remaining glue layer as a mask, the conductive layer is etched to form a bristle-shaped conductive layer. After that, the glue layer and micro masking-balls are removed, thereby allowing the remaining bristle-shaped conductive layer to form a storage plate of a semiconductor capacitor.

REFERENCES:
patent: 5427974 (1995-06-01), Lur et al.
patent: 5817554 (1998-10-01), Tseng

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