Method for fabricating a single-crystal semiconductor

Details Method for fabricating a single-crystal semiconductor Method for fabricating a single-crystal semiconductor

1997-03-31

1999-10-19

Hiteshew, Felisa

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth from liquid or supercritical state

Having pulling during growth

117 14, 117 15, C30B 1520

Patent

active

059682604

ABSTRACT:
A method for fabricating a single-crystal semiconductor by means of CZ method is disclosed. The method separates the single-crystal semiconductor from the melt by increasing the lift rate when the growth of a crystal body is finished. By controlling the lift rate, the single-crystal semiconductor is then gradually cooled within a range of an arbitrary crystal temperature, thereby forming a concave separated surface. The single-crystal semiconductor is cooled at a rate of lower than 35.degree. C./min when the temperature of the separated surface is within a range between the melting point and 1000.degree. C., or by keeping the temperature of the separated surface within a range between 1250.degree. C. and 1000.degree. C. for more than 30 minutes. Therefore, no dislocation is introduced in the crystal body, and productivity is improved.

REFERENCES:
patent: 5474020 (1995-12-01), Bell et al.
patent: 5487355 (1996-01-01), Chiou et al.
patent: 5628823 (1997-05-01), Chandrasekhar et al.

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