Method for fabricating a single-crystal semiconductor

Details Method for fabricating a single-crystal semiconductor Method for fabricating a single-crystal semiconductor

1998-01-22

1999-12-07

Hiteshew, Felisa

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth from liquid or supercritical state

Having pulling during growth

117 15, 117201, 117217, 117218, 117222, C30B 1518

Patent

active

059976357

ABSTRACT:
An apparatus and a method for fabricating a single-crystal semiconductor by means of CZ method are provided for improving the quality control through the modification of thermal cycle of a pulled single-crystal semiconductor. The apparatus includes a ring after heater which is capable of elevation. The method decreases a temperature gradient to smaller than 20.degree. C./cm, and preferably under 15.degree. C./cm, when the pulled single-crystal semiconductor is cooled from 1200.degree. C. to 1000.degree. C. The after heater therefore heats the single-crystal semiconductor where there is a temperature of 100-300.degree. C. lower than the range of 1200-1000.degree. C. A thermal shelter is provided to retain a temperature gradient of larger than 20.degree. C./cm when the single-crystal semiconductor is within the temperature range between the melting point and 1250.degree. C. The after heater and the shelter can be raised to an upper portion when polysilicon blocks are charged and a twisting step is carried out.

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